6英寸硅基氮化镓外延片 6-inch GaN on Silicon Dmode HEMT Epiwafer | ||
外延结构Layer Name | 厚度Thickness | 备注Notes |
Cap-GaN | 3nm | |
Barrier AlGaN | 20-30nm | Al%:20-27% |
AlN | 1nm | |
UGaN | 200nm | |
CGaN | 1500nm | |
Buffer AlGaN | 3200nm | Al%:10-70% |
Buffer AlN | 250nm | |
Substrate Si(Notch、Flat) | 1000μm | 150 mm Si (111) |
参数名称Item | 参数标准 Specifications | |
Epi thickness | 5.2±0.5 | μm |
Edge crack | <3 | mm |
Bow | <±30 | μm |
GaN XRD FWHM(002) | <700 | arcsec |
GaN XRD FWHM(102) | <800 | arcsec |
2DEG mobility | >1800 | cm2/V·s |
2DEG concentration | >8E12 | cm-2 |
Sheet resistance | <400 | Ω |